tp0604 doc.# dsfp-tp0604 c082012 features ? low threshold (-2.4v max.) ? high input impedance ? low input capacitance (95pf typical) ? fast switching speeds ? low on-resistance ? free from secondary breakdown ? low input and output leakage applications ? log ic level interfaces - ideal for ttl and cmos ? solid state relays ? battery operated systems ? photo voltaic drives ? analog switches ? general purpose line drivers ? telecom switches general description this low threshold, enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven, silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeffcient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. p-channel enhancement-mode vertical dmos fet absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. pin confguration to-92 (n3) gate source drain yy = year sealed ww = week sealed = ?green? packaging s itp 0604 yyww to-92 (n3) product marking package may or may not include the following marks: si or ordering information part number package option packing tp0604n3-g 3-lead to-92 1000/bag tp0604n3-g p002 3-lead to-92 2000/reel tp0604n3-g p003 tp0604n3-g p005 tp0604n3-g p013 tp0604n3-g p014 tp2404nw die in wafer form --- tp2404nj die on adhesive tape --- tp2404nd die in waffe pack --- product summary bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (a) v gs(th) (max) (v) -40 2.0 -2.0 -2.4 for packaged products, -g indicates package is rohs compliant (green). to-92 taping specifcations and winding styles per eia-468 standard. devices in wafer / die form are rohs compliant (green). refer to die specifcation vf57 for layout and dimensions. supertex inc. supertex inc. www .supertex.com
2 tp0604 doc.# dsfp-tp0604 c082012 electrical characteristics (t a = 25 o c unless otherwise specifed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage -40 - - v v gs = 0v, i d = -2.0ma v gs(th) gate threshold voltage -1.0 - -2.4 v v gs = v ds , i d = -1.0ma v gs(th) change in v gs(th) with temperature - -3.0 -4.5 mv/ o c v gs = v ds , i d = -1.0ma i gss gate body leakage - - -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - -10 a v gs = 0v, v ds = max rating - - -1.0 ma v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current -0.4 -0.6 - a v gs = -5.0v, v ds = -20v -2.0 -3.3 - v gs = -10v, v ds = -20v r ds(on) static drain-to-source on-state resistance - 2.0 3.5 v gs = -5.0v, i d = -250ma - 1.5 2.0 v gs = -10v, i d = -1.0a r ds(on) change in r ds(on) with temperature - - 1.2 %/ o c v gs = -10v, i d = -1.0a g fs forward transductance 400 600 - mmho v ds = -20v, i d = -1.0a c iss input capacitance - 95 150 pf v gs = 0v, v ds = -20v, f = 1.0mhz c oss common source output capacitance - 85 120 c rss reverse transfer capacitance - 35 60 t d(on) turn-on delay time - 5.0 8.0 ns v dd = -20v, i d = -1.0a, r gen = 25 t r rise time - 7.0 18 t d(off) turn-off delay time - 10 15 t f fall time - 6.0 19 v sd diode forward voltage drop - -1.3 -2.0 v v gs = 0v, i sd = -1.5a t rr reverse recovery time - 300 - ns v gs = 0v, i sd = -1.5a notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulsed test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. notes: ? i d (continuous) is limited by max rated t j . thermal characteristics package i d (continuous) ? (a) i d (pulsed) (a) power dissipation @t a = 25 o c (w) ja ( o c/w) i dr ? (a) i drm (a) to-92 -0.43 -4.2 0.74 132 -0.43 -4.2 switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator vdd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input r gen input output 0v vdd 0v -10v supertex inc. www .supertex.com
3 tp0604 doc.# dsfp-tp0604 c082012 typical performance curves saturation characteristics 0 -2.0 -4.0 -6.0 -8.0 -1 0 power dissipation vs. case temperature 0 150 100 50 2.0 1.0 125 75 25 0 -5 -4 -3 -2 -1 0 -6v -8v -4v to-92 i d (amperes) t c ( o c) p d (watts) v ds (volts) v gs = -10v thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1.0 10 0 t p (seconds) to-92 p d = 1.0w t c = 25 o c output characteristics -5 -4 -3 -2 -1 0 0 -10 -20 -30 -4 0 v ds (volts) i d (amperes) maximum rated safe operating area -1 -10 -100 -1000 -0.1 -1.0 -10 -0.01 t c = 25 o c to-92 (dc) v ds (volts) i d (amperes) transconductance vs. drain current t a = -55 o c g fs (siemens) i d (amperes ) v ds = -25v t a = -150 o c t a = 25 o c 1.0 0.8 0.6 0.4 0.2 0 0 -1.0 -2.0 -3.0 -5v -7v -9v -6v -8v -4v v gs = -10v -5v -7v -9v supertex inc. www .supertex.com
4 tp0604 doc.# dsfp-tp0604 c082012 typical performance curves (cont.) gate drive dynamic characteristic s -10 -8 -6 -4 -2 q g (nanocoulombs ) 0 0.5 1.0 1.5 2.0 2. 5 180pf 75pf v gs (volts) v ds = -10v 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 15 0 2.0 0.8 1.6 0.4 1.2 v (th) and r ds variation with temperatur e on-resistance vs. drain current 7.5 6.0 5.0 3.0 1.5 0 -1.0 -2.0 -3.0 -0.4 -5.0 r ds(on) (ohms) v gs = -5.0v 1.1 1.0 0.9 -50 0 50 100 150 bv dss (normalized) t j ( o c) transfer characteristic s -5 -2 0 -2.0 -4.0 -6.0 -8.0 -10 -1 -3 -4 v gs (volts) i d (amperes ) v ds = -25 o c t a = -55 o c t a = 150 o c capacitance vs. drain-to-source voltage 200 150 100 50 0 -10 -20 -30 -40 c (picofarads) f = 1.0mhz ciss coss crss v ds (volts) i d (amperes) bv dss variation with temperatur e 0 t a = 25 o c v (th) @ -1.0ma r ds(on) @ -10v, -1.0a 0 0 0 0 t j ( o c) v gs = -10v v gs(th) (normalized) r ds(on) (normalized) v ds = -40v supertex inc. www .supertex.com
5 tp0604 (the package drawing(s) in this data sheet may not refect the most current specifcations. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-tp0604 c082012 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not specifed in the jedec drawing. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to92n3, version e041009. seating plane 1 2 3 front v iew side v iew bottom v iew e1 e d e1 l e c 1 2 3 b a supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. (website: http//www .supertex.com) ?2012 supertex inc. all rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
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